ECE 6760

ECE 6760

Course information provided by the 2025-2026 Catalog.

The first half of this course will cover semiconductor memory technologies including SRAM, DRAM/eDRAM, and embedded non-volatile memories (RRAM, ferroelectric RAM, etc.). The lectures will encompass bitcell designs, array architecture, peripheral circuits, scaling trend, and target applications. The second half of this course will teach memory-centric computing, including SRAM/eDRAM/eNVM-based compute-in-memory designs and DRAM-based processing-in-memory designs, which have been demonstrated in both academia and industry in recent years.


Enrollment Priority Enrollment limited to: Cornell Tech students.

Last 4 Terms Offered 2025SP

Outcomes

  • Students will identify different memory technologies and corresponding applications.
  • Students will demontstrate how to design memory bitcells and arrays, with an understanding on the trade-off of density, power, noise margin, reliability, etc.
  • Students will demonstrate SRAM-based compute-in-memory and DRAM-based processing-in-memory designs, which emerged as energy-efficient solutions for AI hardware.

View Enrollment Information

Syllabi: none
  •   Regular Academic Session. 

  • 3 Credits GradeNoAud

  •  9575 ECE 6760   LEC 001

    • TR
    • Jan 20 - May 5, 2026
    • Seo, J

  • Instruction Mode: Distance Learning-Synchronous

Syllabi: none
  •   Regular Academic Session. 

  • 3 Credits GradeNoAud

  •  9488 ECE 6760   LEC 030

    • TR
    • Jan 20 - May 5, 2026
    • Seo, J

  • Instruction Mode: In Person

    Enrollment Limited to Cornell Tech Students only.