ECE 3150

ECE 3150

Course information provided by the 2015-2016 Catalog.

Introduces the basic devices and circuits in modern microelectronics. Students learn not only basic structures and operations of semiconductor devices through simple models (diodes, CMOS, and BJT) but also how to analyze and design basic transistor modules in digital and analog circuits including biasing, amplifiers, filters, logic gates, and memory. The course introduces intuitive design methods to map circuit specifications to transistor topology, as well as first-order time-constant estimation. SPICE and measurement labs accompany the progress in lectures for hands-on experiences.


Prerequisites/Corequisites Prerequisite: ECE 2100/ENGRD 2100.

Outcomes

  • Understand basic semiconductor device concepts and terminology.
  • Understand basic Diode, BJT, and MOS transistor structure, operation, and terminology.
  • Use the MOS transistor model to perform qualitative and quantitative operating-point analysis for CMOS circuits in class and in lab.
  • Understand how small signal transistor parameters relate to channel current in the diodes and MOS transistor.
  • Use superposition to analyze linear active circuits and perform small signal analysis of CMOS circuits.

When Offered Spring.

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Syllabi: none
  •   Regular Academic Session.  Choose one lecture, one discussion, and one laboratory.

  • 4 Credits Graded

  • 11100 ECE 3150   LEC 001

  • Instruction Mode: In Person

  • 11101 ECE 3150   DIS 201

  • Instruction Mode: In Person

  • 11387 ECE 3150   DIS 202

  • Instruction Mode: In Person

  • 11102 ECE 3150   LAB 401

    • T
    • Rana, F

  • Instruction Mode: In Person

  • 11103 ECE 3150   LAB 403

    • W
    • Rana, F

  • Instruction Mode: In Person

  • 11195 ECE 3150   LAB 405

    • M
    • Rana, F

  • Instruction Mode: In Person

  • 11422 ECE 3150   LAB 406

    • R
    • Rana, F

  • Instruction Mode: In Person

  • 12328 ECE 3150   LAB 407

    • F
    • Rana, F

  • Instruction Mode: In Person