ECE 4570

Silicon Device Fundamentals

Course Description

Course information provided by the 2016-2017 Catalog.

Develops an understanding of device physics by principally focusing on silicon‐based structures. Starting with a look at carrier statistics, energy diagram and transport, the course analyzes the operation of diodes (p/n and Schottky) and bipolar junction transistors to elucidate operational principles in quasistatic, small‐signal and high‐frequency conditions. It then spends about two thirds of the time on metal‐oxide‐semiconductor structures and their transistors with an emphasis on advanced features of modern technology for digital and high frequency operation. The exploration encompasses long to short devices, inversion, strain, gate‐stack, silicon‐on‐insulator, tunneling, hot carriers, instabilities and reliability, and the non‐volatile memories. Accurate modeling, manufacturability and applications underlie this exploration. By using computer simulation and experimental data, the course culminates in a design project dealing with technical concerns in current VLSI industry. The goal for this course is to develop an understanding in the student of the working of the devices so that circuits, devices, and semiconductor processes can all be placed in a fulsome context of the modern integrated semiconductor integrated chip.

Prerequisites/Corequisites Prerequisite: ECE 3150 and ECE 3030 or MSE 2620 or AEP 4500.

Outcomes

• Obtain a basic understanding of semiconductor device operation.
• Learn the operation of semiconductor test equipment including on wafer probing techniques. Carry out basic automated measurement sequences.
• Apply device fundamentals to effectively predict the measured behavior of the device under test.
• Develop comprehensive experimental and analytical skills leading to effective communication of results.

When Offered Fall.

View Enrollment Information